N-type monocrystalline silicon wafers

Mastery of multiple

0.6-1.6 <Ω·cm>

Resistivity

≤12 <ppma>

Oxygen content

≤1 <ppma>

Carbon content

≥800 <µs>

Lifetime

0.6-1.6 <Ω·cm>

Resistivity
≤12 <ppma>

Oxygen content
≤1 <ppma>

Carbon content
≥800 <µs>

Lifetime

Material properties

Item

Specifications

Test Method
Growth method

Czochralski technique

--
Crystallinity

Monocrystalline

--
Conductive type

N-Type

PN testing machine
Dimensions

M10：：182.2*182.2*φ247mm
G12：：210*210*φ295mm
G12-R：：182.3*210*φ272mm

AOI
Thickness

M10：：90-160?m
G12：：90-160?m
G12-R：：90-160?m

AOI

Item	Specifications	Test Method
Growth method	Czochralski technique	--
Crystallinity	Monocrystalline	--
Conductive type	N-Type	PN testing machine
Dimensions	M10：：182.2182.2φ247mm G12：：210210φ295mm G12-R：：182.3210φ272mm	AOI
Thickness	M10：：90-160?m G12：：90-160?m G12-R：：90-160?m	AOI

Electrical properties

Item

Specifications

Test Method
Resistivity

0.6-1.6<Ω·cm>

AOI
Lifetime

≥800<µs>

BCT-400
Oxygen content

≤12<ppma>

FTIR (ASTM F121-83)
Carbon content

≤1<ppma>

FTIR (ASTM F123-91)

Item	Specifications	Test Method
Resistivity	0.6-1.6<Ω·cm>	AOI
Lifetime	≥800	BCT-400
Oxygen content	≤12	FTIR (ASTM F121-83)
Carbon content	≤1	FTIR (ASTM F123-91)

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